High-Speed Fast Switching Type, 650V 50A, Automotive Hybrid IGBT with Built-In SiC-SBD
The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS.

Common Standard AEC-Q101 (Automotive Grade)
Series W: High speed fast SW
VCES [V] 650
IC(100°C)[A] 50
VCE(sat) (Typ.) [V] 1.5
tf(Typ.) [ns] 40
Built-in Diode SiC-SBD
Pd [W] 254
BVCES (Min.)[V] 650
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Package Size [mm] 16×21 (t=5.2)

AEC-Q101 Qualified
Low Collector – Emitter Saturation Voltage
Low Switching Loss & Soft Switching
Built in No Recovery Silicon Carbide SBD
Pb – free Lead Plating ; RoHS Compliant

Technology : Schottky
Mounting : standard
Function : switching
Electrical characteristics : high-speed, DC, switching
Technical characteristics : silicon carbide, standard
DC voltage : 650 V